Analysis of geometrical magnetoresistance Al0.35Ga0.65N/GaN MODFETs

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Volumn 2002-January, Issue , 2002, Pages 393-396

  Umana Membreno, G A ^a   Dell, J M ^a   Parish, G ^a   Faraone, L ^a  

^a UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; EXTRACTION; FIELD EFFECT TRANSISTORS; GALLIUM; MICROELECTRONICS; OHMIC CONTACTS; PARAMETER EXTRACTION;

CHANNEL ACCESS; CONCENTRATION PROFILES; DELETERIOUS EFFECTS; FIELD EFFECT TRANSISTOR STRUCTURES; PARAMETER-EXTRACTION METHOD; PARASITIC ELEMENT; PARASITIC RESISTANCES;

ALUMINUM;

EID: 84952660771     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/COMMAD.2002.1237273     Document Type: Conference Paper

References (4)

1. D. C-Look and G. B. Norris, Solid-State Electronics 29 (1986) 159.
2. D. Dclagcbcaudcuf and N. T. Linh. IEEE Traus. Electron Devices ED-29 (1982) 955.
3. T. T. Drummond. H. Morkoć, K. Lee and M. Shur, IEEE Electron Device Lett. EDL-3 (1982) 338.
4. J. Autoszewski, M. Gracey, T. M. Dell, L. Faraone. T. A. Fisher. G. Parish. Y.-F. Wu and U. K. Mishra. J. Appl. Phys. 87 (2000) 3900.