Simulation of multilayer defects in EUV masks

Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000

Volumn , Issue , 2000, Pages 36-37

  Ito, Masaaki ^a   Ogawa, Taro ^a   Otaki, Katsura ^a   Nishiyama, Iwao ^a   Okazaki, Shinji ^a   Terasawa, Tsuneo ^b  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EXTREME ULTRAVIOLET LITHOGRAPHY; MASKS; MULTILAYERS; NANOTECHNOLOGY; PHASE SHIFT; PHASE SHIFTERS; PHOTOMASKS;

3-DIMENSIONAL ANALYSIS; ABSORBER LAYERS; ELECTROMAGNETIC SIMULATION; EXTREME ULTRAVIOLET MASKS; MASSIVE COMPUTING; MULTILAYER DEFECTS; REFLECTED FIELDS; STRUCTURAL DISORDERS;

DEFECTS;

EID: 84952027198     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMNC.2000.872610     Document Type: Conference Paper

References (2)

1. T. Pistor and A. Neureuther, J. Vac. Sci. Technol. B 17, 3019 (1999).
2. M. Yamamoto and T. Namioka, Appl. Opt. 31, 1622 (1992).