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Volumn 102, Issue , 1996, Pages 82-85

The role of low temperature growth defects for the stability of strained Si/Si1-x Gex heterostructures

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; DISLOCATIONS (CRYSTALS); NUCLEATION; POINT DEFECTS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; STRAIN; STRESS RELAXATION; THERMODYNAMIC STABILITY;

EID: 0030564842     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00025-6     Document Type: Article
Times cited : (7)

References (7)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.