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Volumn 102, Issue , 1996, Pages 82-85
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The role of low temperature growth defects for the stability of strained Si/Si1-x Gex heterostructures
a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVATION ENERGY;
ANNEALING;
DISLOCATIONS (CRYSTALS);
NUCLEATION;
POINT DEFECTS;
SEMICONDUCTING SILICON;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR GROWTH;
STRAIN;
STRESS RELAXATION;
THERMODYNAMIC STABILITY;
DOPANT ATOMS;
HIGH RESOLUTION RECIPROCAL LATTICE MAPPING (HRRLM);
MISFIT CRYSTAL DISLOCATIONS;
MOSAIC BROADENING;
RELAXATION TEMPERATURE;
HETEROJUNCTIONS;
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EID: 0030564842
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/0169-4332(96)00025-6 Document Type: Article |
Times cited : (7)
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References (7)
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