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Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Volumn 2000-January, Issue , 2000, Pages 41-48

The doping problem in II-VI-compounds and its consequences for wide gap II-VI devices

(4) Faschinger, W a Gundel, S a Numberger J a Albert, D a

a UNIVERSITY OF WÜRZBURG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT DENSITY; MICROELECTRONICS; NITROGEN; SEMICONDUCTING SELENIUM COMPOUNDS; TELLURIUM COMPOUNDS;

DEGRADATION PROCESS; II-VI COMPOUNDS; INTERSTITIAL SITES; NITROGEN ACCEPTORS; OPTICAL DEGRADATION; PROTOTYPE DEVICES; STRAIN ENGINEERING; TOTAL ENERGY CALCULATION;

DENSITY FUNCTIONAL THEORY;

EID: 84949755778 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/COMMAD.2000.1022887 Document Type: Conference Paper

Times cited : (3)

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