Ab initio energy calculation of nitrogen-related defects in ZnSe

Journal of Crystal Growth

Volumn 214, Issue , 2000, Pages 474-477

  Gundel, S ^a   Albert, D ^a   Nurnberger J ^a   Faschinger, W ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; LIGHTING; NITROGEN; PHOTOCHEMICAL REACTIONS; PHOTOLUMINESCENCE; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; STACKING FAULTS; ZINC ALLOYS;

DEEP LUMINESCENCE; DENSITY FUNCTIONAL CALCULATIONS; NITROGEN ACCEPTOR; OPTICAL DEGRADATION; QUANTUM WELL LUMINESCENCE;

SEMICONDUCTOR LASERS;

EID: 0033689649     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00133-0     Document Type: Article

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