Formation of robust junction between Cu(InGa)Se2-based absorber and Zn(O,S,OH)x buffer prepared on a 30cm×30cm submodule

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 424-427

  Kushiya, Katsumi ^a   Hara, Ichizou ^a   Tanaka, Yoshiaki ^a   Morishita, Takahiro ^a   Okumura, Daisuke ^a   Nagoya, Yoshinori ^a   Tachiyuki, Muneyori ^a   Sang, Baosheng ^b   Yamase, Osamu ^a  

^a Central Research and Development Laboratory   (Japan)

^b NEDO ^*  (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION;

APERTURE AREA; BASELINE PROCESS; CONTROL PARAMETERS; DEPOSITION PROCESS; ELECTRICAL YIELD; SUBMODULES; THICKNESS UNIFORMITY;

ZINC;

EID: 84949567364     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.915859     Document Type: Conference Paper

References (7)

1. F. Karg, Tech. Dig. 11th PVSEC (1999), 627 (to be published in Solar Energy Materials and Solar Cells (2000)).
2. M. Powalla, M. Cemernjak, A. Eicke, J. Springer, A. Song, G. Voorwinden, A. Zeiler and G. Dimmler: Proc. 16th EC PVSEC (2000) (to be published).
3. M. Powalla and B. Dimmler, Tech. Dig. 11th PVSEC (1999), Late news (to be published in Solar Energy Materials and Solar Cells (2000)).
4. M. Powalla and B. Dimmler, Proc. E-MRS Spring Meeting (1999), 0-633.
5. K. Kushiya, Proc. E-MRS-2000 Meeting (2000), OS-5 (to be published).
6. K. Kushiya, Tech. Dig. 11th PVSEC (1999), 637 (to be published in Solar Energy Materials and Solar Cells (2000)).
7. K. Kushiya, T. Nii, I. Sugiyama, Y. Satoh, Y. Inamori, H. Takeshita, Jpn. J. Appl. Phys. 35 (1996), pp. 4383.