High rate deposition of silicon thin films by hot wire cell method for solar cell applications

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 788-791

  Konagai, M ^a   Tsushima, T ^a   Ide, Y ^a   Asakusa, K ^a   Fujisaki, T ^a   Kim, M K ^a   Wakita, Y ^a   Yamada, A ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS MATERIALS; AMORPHOUS SILICON; DEPOSITION; DEPOSITION RATES; POLYCRYSTALLINE MATERIALS; POLYSILICON; SILICON; SOLAR CELLS; THIN FILMS;

FILAMENT TEMPERATURE; HIGH CONDUCTIVITY; HIGH-RATE DEPOSITION; HOT-WIRE CELL METHOD; HYDROGEN DILUTION; POLYCRYSTALLINE-SI; SOLAR-CELL APPLICATIONS; SUBSTRATE TEMPERATURE;

SILICON SOLAR CELLS;

EID: 84949565024     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.916001     Document Type: Conference Paper

References (4)

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