Stabilized 9% efficiency of large-area (∼5000cm2) A-Si/A-SiGe tandem submodules using high-rate deposition

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 736-741

  Okamoto, S ^a   Terakawa, A ^a   Maruyama, E ^a   Shinohara, W ^a   Hishikawa, Y ^b   Kiyama, S ^a  

^a SANYO ELECTRIC CO LTD   (Japan)

^b Japan Quality Assurance Organization   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DEPOSITION RATES; EFFICIENCY; HYDROGEN; LIGHT SCATTERING; PLASMA CVD; SILICON; SOLAR CELLS; SOLAR POWER GENERATION;

DEPOSITION CONDITIONS; DEVICE PERFORMANCE; HIGH DEPOSITION RATES; HIGH-RATE DEPOSITION; OPTICAL CONFINEMENT; PHOTOVOLTAIC LAYERS; STABILIZED EFFICIENCY; SUBSTRATE TEMPERATURE;

CHEMICAL VAPOR DEPOSITION;

EID: 84949558205     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.915989     Document Type: Conference Paper

References (8)

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2. S. Okamoto et al., to be published in Sol. Energy Mater. & Sol. Cell.
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4. Y. Hishikawa et al., J. Appl. Phys. 73 (1993) 4227.
5. S. Okamoto et al., Jpn. J. Appl. Phys. 35 (1996) 26.
6. N. Terada et al., Mat. Res. Soc. Symp. Proc. 557 (1999) 145.
7. Y Hishikawa et al., Sol. Energy Mater. & Sol. Cell. 49 (1997)143.
8. Y Hishikawa et al., Tech. Digest of 11th Int. PVSEC, Sapporo (1999), p. 219.