Very wide-gap and device-quality a-si:h from highly h, diluted sih, plasma decomposed by high rf power

Materials Research Society Symposium - Proceedings

Volumn 557, Issue , 1999, Pages 145-150

  Terada, N ^a   Yata, S ^a   Terakawa, A ^a   Okamoto, S ^a   Wakisaka, K ^a   Kiyama, S ^a  

^a SANYO ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CRYSTALLINE MATERIALS; ENERGY GAP; HYDROGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GLASS; SEMICONDUCTING SILICON; SILANES;

HYDROGEN DILUTION; HYDROGENATED AMORPHOUS SILICON;

AMORPHOUS FILMS;

EID: 0033298769     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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