Deposition temperature dependent properties of mocvd grown polycrystalline CuGaSe2 thin films and solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 626-629

  Fiedeler, U ^a   Bauknecht, A ^a   Gerhard, A ^a   Albert, J ^a   Lux Steiner, M Ch ^a   Siebentritt, S ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

CuGaSe2; MOCVD; Photoluminescence; Solar Cells

Indexed keywords

DEPOSITION; ENERGY GAP; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NEODYMIUM COMPOUNDS; OPEN CIRCUIT VOLTAGE; ORGANOMETALLICS; PHOTOLUMINESCENCE; SOLAR CELLS; SOLAR POWER GENERATION; THICK FILMS; THIN FILMS;

BAND-GAP EMISSION; COMPOSITIONAL DEPENDENCE; CUGASE2; DEPOSITION TEMPERATURES; DONOR-ACCEPTOR PAIR TRANSITIONS; LOW DEPOSITION TEMPERATURE; PHOTOVOLTAIC PARAMETERS; VAPOUR DEPOSITION;

VAPOR DEPOSITION;

EID: 84949556257     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.915921     Document Type: Conference Paper

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