Low surface recombination velocity on silicon wafer surfaces due to iodine-ethanol treatment

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 10, 1999, Pages 5710-5714

  Kurita, Kazunari ^a   Shingyouji, Takayuki ^a  

^a MITSUBISHI MATERIALS CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CRYSTAL ORIENTATION; ETHANOL; IODINE; OXIDATION; PASSIVATION; SOLUTIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

LOW SURFACE RECOMBINATION VELOCITY;

SILICON WAFERS;

EID: 0033345102     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.5710     Document Type: Article

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