A-Si:H-based triple-junction cells prepared at i-layer deposition rates of 10 Å/s using a 70 MHz PECVD technique

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 845-848

  Jones, S J ^a   Liu, T ^a   Deng, X ^a   Izu, M ^a  

^a Energy Conversion Devices Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CELLS; CYTOLOGY; DEPOSITION; DEPOSITION RATES; EFFICIENCY; SILICON ALLOYS;

ACTIVE AREA; CELL EFFICIENCY; DEPOSITION CONDITIONS; HIGH-EFFICIENCY; LIGHT SOAKING; TOTAL-AREA EFFICIENCY; TRIPLE JUNCTION CELLS; VHF-PECVD;

PLASMA CVD;

EID: 84949550756     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.916015     Document Type: Conference Paper

References (8)

1. H. Chatam, P.K. Bhat, Mat. Res. Soc. Symp. Proc. 149, 1989, 447.
2. A. Shah, J. Dutta, N. Wyrsch, K. Prasad, H. Curtins, F. Finger, A. Howling, Ch. Hollenstein, Mat. Res. Soc. Symp. Proc. 258, 1992, 15.
3. S.J. Jones, X. Deng, T. Liu, M. Izu, Mat. Res. Soc. Symp. Proc. 507, 1998, 113.
4. J. Yang, S. Sugiyama, S. Guha, Mat. Res. Soc. Symp. Proc. 507, 1998, 157.
5. rd IEEE PV Spec. Conf., 1993, 919.
6. J. Yang. S. Guha, Mat. Res. Soc. Proc. 557, 239 (1999).
7. S.J Jones, Y. Chen, D.L. Williamson, R. Zedlitz, G. Bauer, Appl. Phys. Lett. 62(25), 1993, 3267.
8. T. Takagi, R. Hayashi, A. Payne, W. Futako, T. Nishimoto, M. Taki, M. Kondo, A. Matsuda, Mat. Res. Soc. Proc. 557, 1999, 105.