Lifetime enhancement in EFG multicrystalline silicon

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 83-86

  Jeong, J W ^a   Rohatgi, A ^a   Rosenblum, M D ^b   Kalejs, J P ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b ASE Americas Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; DEFECTS; PASSIVATION;

ANNEALING TEMPERATURES; DEFECT PASSIVATION; EFG MULTI-CRYSTALLINE SILICONS; HIGH TEMPERATURE; LIFETIME ENHANCEMENT; MANUFACTURABLE PROCESS; MAXIMUM LIFETIMES; OPTIMUM TEMPERATURE;

SILICON NITRIDE;

EID: 84949544795     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.915758     Document Type: Conference Paper

References (6)

1. R. O. Bell et al., "Growth of silicon sheets for photovoltaic applications", J. Mater. Res. 13(10), 1998, pp. 2732-2739.
2. P. Sana et al., "Gettering and hydrogen passivation of edge-defined film-fed grown multicrystalline silicon solar cells by Al diffusion and forming gas anneal", Appl. Phys. Lett. 64(1), 1994, pp. 97-99,1994.
3. B. Sopori et al., "A comparison of gettering in singleand multicrystalline silicon for solar cells", Proc. of 25th IEEE Photovoltaic Specialists Conference, 1996, pp. 625-628.
4. M. Spiegel et al., "Investigation of hydrogen diffusion, effusion and passivation in solar cells using different multicrystalline silicon base materials", Proc. of 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion, 1998, pp. 1685-1688.
5. R. Lüdemann et al., "Hydrogen passivation of low-and high-quality mc-Silicon for high-efficiency solar cells", Proc. of 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion, 1998, pp. 1638-1641.
6. J. Bailey et al., "Material electronic quality specification factors for polycrystalline silicon wafers", Proc. of 1st World Conference of Photovoltaic Energy Conversion, 1994, pp. 1356-1359.