Novel NMOS transistor for high performance ESD protection devices in 0.18 μm CMOS technology utilizing salicide process

Electrical Overstress/Electrostatic Discharge Symposium Proceedings

Volumn , Issue , 2000, Pages 407-412

  Kim, Chang Su ^a   Park, Hong Bae ^a   Kim, Young Gwan ^a   Kang, Dae Gwan ^a   Lee, Myoung Goo ^a   Lee, Si Woo ^a   Jeon, Chan Hee ^a   Kim, Han Gu ^a   Yoo, Young Jae ^a   Yoon, Han Sub ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC DISCHARGES; ELECTRIC EQUIPMENT PROTECTION; ELECTROSTATICS; GATES (TRANSISTOR);

BREAKDOWN CURRENT; ELECTROSTATIC DISCHARGES (ESD); SALICIDATION; TRANSMISSION LINE PULSES;

MOS DEVICES;

EID: 0034541828     PISSN: 07395159     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)