Plasma charging damage to gate dielectric-past, present and future

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn 2002-January, Issue , 2002, Pages 237-241

  Cheung, K P ^a  

^a RUTGERS UNIVERSITY   (United States)

Author keywords

Breakdown voltage; Circuits; Dielectrics; Electric breakdown; Plasma applications; Plasma density; Plasma devices; Plasma materials processing; Plasma sources; Stress

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; FAILURE ANALYSIS; INTEGRATED CIRCUITS; NETWORKS (CIRCUITS); PLASMA APPLICATIONS; PLASMA DENSITY; PLASMA DEVICES; PLASMA SOURCES; STRESSES;

CIRCUIT RELIABILITY; ELECTRICAL STRESS; HIGH- K GATE DIELECTRICS; INTEGRATED CIRCUIT TECHNOLOGY; PLASMA CHARGING; PLASMA MATERIALS-PROCESSING; PLASMA SYSTEMS;

GATE DIELECTRICS;

EID: 84948733803     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPFA.2002.1025670     Document Type: Conference Paper

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