Characterization of plasma damage in plasma nitrided gate dielectrics for advanced CMOS dual gate oxide process

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn 2002-January, Issue , 2002, Pages 41-44

  Chen, C C ^a   Yu, M C ^a   Cheng, J Y ^a   Wang, M F ^a   Lee, T L ^a   Chen, S C ^a   Yu, C H ^a   Liang, M S ^a   Chen, C H ^b   Yang, C W ^b   Fang, Y K ^b  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

CMOS process; CMOS technology; Degradation; Dielectrics; Gate leakage; Leakage current; Nitrogen; Plasma applications; Plasma devices; Plasma properties

Indexed keywords

CMOS INTEGRATED CIRCUITS; DEGRADATION; DIELECTRIC MATERIALS; GATE DIELECTRICS; GATES (TRANSISTOR); LEAKAGE CURRENTS; NITRIDATION; NITROGEN; NITROGEN PLASMA; PLASMA DEVICES;

CMOS PROCESSS; CMOS TECHNOLOGY; GATE LEAKAGES; GATE OXIDE INTEGRITY; PLASMA INDUCED DAMAGE; PLASMA NITRIDED GATE DIELECTRICS; PLASMA PROPERTIES; REMOTE PLASMA NITRIDATION;

PLASMA APPLICATIONS;

EID: 84948733292     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PPID.2002.1042604     Document Type: Conference Paper

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