Improved performance of FETs with HfAlOx gate dielectrics using optimized poly-SiGe gate electrodes

Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003

Volumn , Issue , 2003, Pages 64-68

  Muto, A ^a   Ohji, H ^a   Kawahara, T ^a   Maeda, T ^a   Torii, K ^a   Kitajima, H ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

Annealing; Electrodes; FETs; Germanium silicon alloys; Hafnium; High K dielectric materials; High K gate dielectrics; Semiconductor films; Silicon germanium; Temperature

Indexed keywords

ANNEALING; BICMOS TECHNOLOGY; DIELECTRIC MATERIALS; ELECTRODES; FILMS; GERMANIUM; GERMANIUM ALLOYS; HAFNIUM; HAFNIUM ALLOYS; REFRACTORY METAL COMPOUNDS; SEMICONDUCTING SILICON; SILICON ALLOYS; TEMPERATURE;

FETS; GERMANIUM SILICON ALLOY; HIGH- K GATE DIELECTRICS; HIGH-K DIELECTRIC MATERIALS; SEMICONDUCTOR FILMS; SILICON GERMANIUM;

GATE DIELECTRICS;

EID: 84945116141     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWGI.2003.159186     Document Type: Conference Paper

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