Epitaxial single-crystal of GaSe epilayers grown on a c-sapphire substrate by molecular beam epitaxy

Physica Status Solidi (A) Applications and Materials Science

Volumn 212, Issue 10, 2015, Pages 2201-2204

  Wu, Chia Hsin ^a   Yang, Chu Shou ^a   Wang, Yen Chi ^a   Huang, Hsi Jung ^a   Ho, Yen Teng ^b   Wei, Lin Lung ^b   Chang, Edward Yi ^b  

^a TATUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

epilayers; GaSe; molecular beam epitaxy; sapphire substrates; transmission electron microscopy

Indexed keywords

ELECTRON MICROSCOPY; EPILAYERS; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SINGLE CRYSTALS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CROSS-SECTION TRANSMISSION ELECTRON MICROSCOPIES; EPILAYERS GROWN; EPITAXIAL SINGLE CRYSTALS; GASE; HIGH RESOLUTION; ROCKING CURVES; SAPPHIRE SUBSTRATES; SITU REFLECTION;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 84943818310     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201532367     Document Type: Article

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