Growth, stimulated emission, photo-and electroluminescence of InGaN/GaN EL-test heterostructures

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 272-275

  Lutsenko, E V ^a   Pavlovskii, V N ^a   Zubialevich, V Z ^a   Stognij, A I ^a   Gurskii, A L ^a   Hryshanau, V A ^b   Shulenkov, A S ^b   Yablonskii, G P ^a   Schon O ^c   Protzmann, H ^c   Lunenburger M ^c   Schineller, B ^c   Dikme, Y ^d   Jansen, R H ^d   Heuken, M ^c  

^a B I STEPANOV INSTITUTE OF PHYSICS   (Belarus)

^b Minsk Research Institute of Radiomaterials   (Belarus)

^c AIXTRON AG   (Germany)

^d RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HEATING; HETEROJUNCTIONS; III-V SEMICONDUCTORS; LIGHT; NITRIDES; SAPPHIRE; SEMICONDUCTOR QUANTUM WELLS;

COOLING CONDITIONS; ELECTROLUMINESCENCE PROPERTIES; ELECTROLUMINESCENCE TEST; EMISSION EFFICIENCIES; OPTICALLY PUMPED LASING; QUANTUM WELL HETEROSTRUCTURES; SILICON SUBSTRATES; TEMPERATURE INTERVALS;

ELECTROLUMINESCENCE;

EID: 20244376227     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390041     Document Type: Conference Paper

References (3)

1. A. Y. Kim, W. Goetz, D. A. Steigerwald, J. J. Wierer, N. F. Gardner, J. Sun, S. A. Stockman, P. S. Martin, M. R. Krames, R. S. Kern, and F. M. Steranka, phy. stat. sol. (a) 188, 15 (2001).
2. T. Egawa, T. Moku, H. Ishikawa, K. Ohtsuka, and T. Jimbo, Jpn. J. Appl. Phys. 41, L663 (2002).
3. G. P. Yablonskii, E. V. Lutsenko, V. N. Pavlovskii, V. Z. Zubialevich, A. L. Gurskii, H. Kalisch, A. Szymakowskii, R. A. Jansen, A. Alam, Y. Dikme, B. Schineller, and M. Heuken, phys. stat. sol. (a) 192, 54 (2002).