InGaAs/InP single photon avalanche diode design and characterization

ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference

Volumn , Issue , 2006, Pages 335-338

  Tosi, Alberto ^a   Cova, Sergio ^a   Zappa, Franco ^a   Itzler, Mark A ^b   Ben Michael, Rafael ^b  

^a POLITECNICO DI MILANO   (Italy)

^b PRINCETON LIGHTWAVE INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COOLING SYSTEMS; FIBER OPTICS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; WAVELENGTH;

DEVICE STRUCTURE; LOW TEMPERATURE; PELTIER COOLERS; SINGLE-PHOTON AVALANCHE DIODES (SPAD);

AVALANCHE DIODES;

EID: 84943198215     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2006.307706     Document Type: Conference Paper

References (9)

1. S.Cova, M.Ghioni, A.Lacaita, C.Samori, F.Zappa, "Avalanche photodiodes and quenching circuits for single photon-detection", Appl. Optics., 35, 1956-1976 (1996).
2. A. Lacaita, P. A. Francese, F. Zappa, and S. Cova, "Single-photon detection beyond 1 μm: performance of commercially available InGaAs/InP detectors," Appl. Opt., 35, 2986 - 2996 (1996).
3. K. Nishida, K. Taguchi, and Y. Matsumoto, "InGaAsP heterostructure avalanche photodiodes with high avalanche gain," Appl. Phys. Lett., 35, 251-252 (1979).
4. J. C. Campbell, A. O. Dental, W. S. Holden, and B. L. Kasper, "High-performance avalanche photodiode with separate absorption, 'grading', and multiplication regions," Electron. Lett., 19, 818 - 820 (1983).
5. S. R. Forrest, O. K. Kim, and R. O. Smith, "Optical response time of In0.53Ga0.47As avalanche photodiodes," Appl. Phys. Lett., 41, 95-98 (1982).
6. M. M. Hayat, B. E. A. Saleh, and M. C. Teich, "Effect of dead space on gain and noise of double-carrier-multiplication avalanche photodiodes," IEEE Trans. Electron Devices, vol. 39, pp. 546-552 (1992).
7. S. Wang, F. Ma, X. Li, O. Karve, X. Zheng, J. C. Campbell, "Analysis of breakdown probabilities in avalanche photodiodes using a history-dependent analytical model," Appl. Phys. Lett., 82, 1971-1973 (2003).
8. Y. Liu, S. R. Forrest, J. Hiadky, M. J. Lange, O. H. Olsen, D. E. Ackley, J. Lightwave Tech., 10, 182 (1992).
9. M. A. Itzler, K. K. Loi, S. McCoy, N. Codd, and N. Komaba, ""High-performance, manufacturable avalanche photodiodes for 10 Ob/s optical receivers," Proc. of 25th Optical Fiber Communication Conference (OFC 2000), 4, 126 - 128 (2000).