Microwave performance of diamond surface-channel FET

Device Research Conference - Conference Digest, DRC

Volumn 2003-January, Issue , 2003, Pages 21-22

  Kasu, M ^a,b   Kubovic, M ^a   Aleksov, A ^a   Kallfass, I ^a   Spitzberg, U ^a   Kobayashi, N ^b   Schumacher, H ^a   Kohn, E ^a  

^a UNIVERSITY OF ULM   (Germany)

^b NTT Basic Research Laboratories   (Japan)

Author keywords

Circuits; Cutoff frequency; Electric breakdown; Electron devices; Laboratories; Microwave devices; Microwave FETs; Noise figure; Noise measurement; Thermal conductivity

Indexed keywords

CUTOFF FREQUENCY; ELECTRIC BREAKDOWN; ELECTRON DEVICES; HIGH ELECTRON MOBILITY TRANSISTORS; LABORATORIES; MICROWAVE DEVICES; NETWORKS (CIRCUITS); NOISE FIGURE; THERMAL CONDUCTIVITY;

DIAMOND SURFACES; GATE LENGTH; MICROWAVE CHARACTERISTICS; MICROWAVE FET; MICROWAVE PERFORMANCE; NOISE MEASUREMENTS;

MICROWAVES;

EID: 84942588018     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2003.1226853     Document Type: Conference Paper

References (4)

1. J. Isberg et al. Science, vol. 297 (2002) p. 1670.
2. M. Kasu and N. Kobayashi, Diamond and Related Materials, to be published, (2003).
3. H. Kawarada, Surface Science Reports, vol. 26 (1996) p 205.
4. A. Aleksov et al. Conference Digest of 60th Device Research Conference (2002) p.181.