In Situ TEM Observations of Sn-Containing Silicon Nanowires Undergoing Reversible Pore Formation Due to Fast Lithiation/Delithiation Kinetics

Journal of Physical Chemistry C

Volumn 119, Issue 38, 2015, Pages 21889-21895

  Lu, Xiaotang ^a   Bogart, Timothy D ^a   Gu, Meng ^b   Wang, Chongmin ^b   Korgel, Brian A ^a  

^a The University of Texas at Austin   (United States)

^b PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; IN SITU PROCESSING; KINETICS; LITHIUM COMPOUNDS; NANOWIRES; PORE SIZE; SILICON; TIN; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS SI; CRYSTALLINE DOMAINS; DE-LITHIATION; IN SITU TRANSMISSION ELECTRON MICROSCOPY (TEM); LITHIATION/DELITHIATION; ORDERS OF MAGNITUDE; PORE FORMATION; SILICON NANOWIRES;

AMORPHOUS SILICON;

EID: 84942540252     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/acs.jpcc.5b06386     Document Type: Article

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