Enhanced photovoltaic effects and switchable conduction behavior in BiFe0.6Sc0.4O3 thin films

Acta Materialia

Volumn 88, Issue , 2015, Pages 83-90

  Fan, Zhen ^a,b   Ji, Wei ^a,b   Li, Tao ^a   Xiao, Juanxiu ^a   Yang, Ping ^a   Ong, Khuong Phuong ^c   Zeng, Kaiyang ^a   Yao, Kui ^b   Wang, John ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c INSTITUTE OF HIGH PERFORMANCE COMPUTING   (Singapore)

Author keywords

BiFeO3; Ferroelectric; Interface; Photovoltaic; Switchable conduction behavior

Indexed keywords

BISMUTH COMPOUNDS; FERROELECTRIC MATERIALS; FERROELECTRIC THIN FILMS; FERROELECTRICITY; HETEROJUNCTIONS; INDIUM COMPOUNDS; INTERFACE STATES; INTERFACES (MATERIALS); IRON COMPOUNDS; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; THIN FILMS;

BIFEO3; CAPACITOR STRUCTURES; ENERGY-BAND ALIGNMENT; FERROELECTRIC POLARIZATION; LOW-RESISTANCE STATE; PHOTOVOLTAIC; SCHOTTKY BARRIER HEIGHTS; SWITCHABLE;

PHOTOVOLTAIC EFFECTS;

EID: 84939185402     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2015.01.021     Document Type: Article

References (26)

1. M.M. Lee, J. Teuscher, T. Miyasaka, T.N. Murakami, and H.J. Snaith Science 338 2012 643
2. J.H. Heo, S.H. Im, J.H. Noh, T.N. Mandal, C.S. Lim, J.A. Chang, and et al. Nat. Photonics 7 2013 486
3. V.M. Fridkin Crystallogr. Rep. 46 2001 654
4. A.M. Glass, D. von der Linde, and T.J. Negran Appl. Phys. Lett. 25 1974 233
5. L. Pintilie, I. Vrejoiu, G.L. Rhun, and M. Alexe J. Appl. Phys. 101 2007 064109
6. B.K. Gan, K. Yao, S.C. Lai, Y.F. Chen, and P.C. Goh IEEE Electron Device Lett. 29 2008 1215
7. K. Uchino Acta Mater. 46 1998 3745
8. R. Guo, L. You, Y. Zhou, Z.S. Lim, X. Zou, L. Chen, and et al. Nat. Commun. 4 2013 1
9. J.F. Ihlefeld, N.J. Podraza, Z.K. Liu, R.C. Rai, X. Xu, T. Heeg, and et al. Appl. Phys. Lett. 92 2008 142908
10. J.B. Neaton, C. Ederer, U.V. Waghmare, N.A. Spaldin, and K.M. Rabe Phys. Rev. B 71 2005 014113
11. D. Lebeugle, D. Colson, A. Forget, and M. Viret Appl. Phys. Lett. 91 2007 022907
12. T. Choi, S. Lee, Y.J. Choi, V. Kiryukhin, and S.W. Cheong Science 324 2009 63
13. W. Ji, K. Yao, and Y.C. Liang Adv. Mater. 22 2010 1763
14. B.K. Gan, K. Yao, S.C. Lai, P.C. Goh, and Y.F. Chen Electron Device Lett. IEEE 32 5 2011 665
15. A.M. Cowley, and S.M. Sze J. Appl. Phys. 36 1965 3212
16. F. Tran, and P. Blaha Phys. Rev. Lett. 102 2009 226401
17. M. Qin, K. Yao, and Y.C. Liang Appl. Phys. Lett. 95 2009 022912
18. D. Lee, S.H. Baek, T.H. Kim, J.G. Yoon, C.M. Folkman, C.B. Eom, and T.W. Noh Phys. Rev. B 84 2011 125305
19. L. Wang, K.J. Jin, C. Ge, C. Wang, H.Z. Guo, H.B. Lu, and G.Z. Yang Appl. Phys. Lett. 102 2013 252907
20. L. Fang, L. You, Y. Zhou, P. Ren, Z.S. Lim, and J. Wang Appl. Phys. Lett. 104 2014 142903
21. P.W.M. Blom, R.M. Wolf, J.F.M. Cillessen, and M.P.C.M. Krijn Phys. Rev. Lett. 73 1994 2107
22. A.Q. Jiang, C. Wang, K.J. Jin, X.B. Liu, J.F. Scott, C.S. Hwang, and et al. Adv. Mater. 23 2011 1277
23. W. Schottky Naturwiss 26 1938 843
24. T.P. Gujar, V.R. Shinde, and C.D. Lokhande Mater. Chem. Phys. 103 2007 142
25. Y. Park, V. Choong, Y. Gao, B.R. Hsieh, and C.W. Tang Appl. Phys. Lett. 68 1996 2699
26. T.H. Yang, Y.W. Harn, K.C. Chiu, C.L. Fan, and J.M. Wu J. Mater. Chem. 22 2012 17071