Analysis of perimeter recombination in the subcells of GaInP/GaAs/Ge triple-junction solar cells

Progress in Photovoltaics: Research and Applications

Volumn 23, Issue 7, 2015, Pages 874-882

  Espinet Gonzalez P ^a   Rey Stolle, I ^a   Ochoa, M ^a   Algora, C ^a   Garcia I ^a   Barrigon E ^a  

^a INSTITUTO DE ENERGÍA SOLAR   (Spain)

Author keywords

concentration; CPV; multijunction; perimeter; photovoltaics; recombination; solar cells

Indexed keywords

CONCENTRATION (PROCESS); GALLIUM ARSENIDE; III-V SEMICONDUCTORS; INDIUM ALLOYS; OPEN CIRCUIT VOLTAGE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR ALLOYS; SOLAR CELLS; SOLAR POWER GENERATION;

MULTIJUNCTION; PERIMETER; PERIMETER RECOMBINATION; PHOTOVOLTAICS; RECOMBINATION; RECOMBINATION FACTORS; SINGLE JUNCTION SOLAR CELLS; TRIPLE JUNCTION SOLAR CELLS;

MULTI-JUNCTION SOLAR CELLS;

EID: 84931561350     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.2501     Document Type: Article

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