3-D modeling of perimeter recombination in GaAs diodes and its influence on concentrator solar cells

Solar Energy Materials and Solar Cells

Volumn 120, Issue PART A, 2014, Pages 48-58

  Ochoa, M ^a   Algora, C ^a   Espinet Gonzalez P ^a   Garcia I ^a  

^a INSTITUTO DE ENERGÍA SOLAR   (Spain)

Author keywords

Model; Perimeter; Potential; Recombination; Surface channel

Indexed keywords

CONCENTRATOR SOLAR CELLS; GAAS SOLAR CELLS; MEASUREMENTS OF; PERIMETER; PERIMETER RECOMBINATION; POTENTIAL; RECOMBINATION; SURFACE CHANNEL;

CONCENTRATION (PROCESS); CURVE FITTING; DIODES; GALLIUM ARSENIDE; GEOMETRY; MODELS; SEMICONDUCTING GALLIUM; SOLAR CELLS;

THREE DIMENSIONAL;

EID: 84888347214     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2013.08.009     Document Type: Article

References (30)

1. P. Espinet, C. Algora, J. González, N. Núñez, and M. Vázquez Degradation mechanism analysis in temperature stress tests on III-V ultra-high concentrator solar cells using a 3D distributed model Microelectronics Reliability 50 2010 1875 1879
2. P. Dodd, T. Stellwag, M. Melloch, and M. Lundstrom Surface and perimeter recombination in GaAs diodes an experimental and theoretical investigation IEEE Transactions on Electron Devices 38 1991 1253 1261 (Pubitemid 21662123)
3. B. Mazhari, and H. Morkoc Surface recombination in GaAs PN junction diode Journal of Applied Physics 73 1993 7509 7514
4. A. Belghachi, and S. Khelifi Modelling of the perimeter recombination effect in GaAs-based micro-solar cell Solar Energy Materials and Solar Cells 90 2006 1 14 (Pubitemid 41566148)
5. H. Atwater, Paths to high efficiency low-cost photovoltaics, in: Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE, pp. 1-3.
6. M. Sheldon, C. Eisler, H. Atwater, GaAs Passivation with Trioctylphosphine Sulfide for Enhanced Solar Cell Efficiency and Durability, Advanced Energy Materials, 2 (2012) 339-344.
7. S. Sze, Physics of semiconductor devices, Wiley, 1981, 96.
8. -xAs heterojunctions Journal of Applied Physics 49 1978 3530 3542 (Pubitemid 8620416)
9. S. Tiwari, D.J. Frank, and S.L. Wright Surface recombination in GaAlAs/GaAs heterostructure bipolar transistors Journal of Applied Physics 64 1988 5009 5012
10. Atlas user's manual Device Simulation Software 2012 Silvaco International
11. M. Levinshtein, S. Rumyantsev, and M. Shur Handbook Series on Semiconductor Parameters vol. 1 1996 World Scientific
12. M. Levinshtein, S. Rumyantsev, and M. Shur Handbook Series on Semiconductor Parameters vol. 2 1999 World Scientific
13. S. Jain, J. McGregor, D. Roulston, and P. Balk Modified simple expression for bandgap narrowing in n-type GaAs Solid-State Electronics 35 1992 639 642
14. R. Ahrenkiel, and M. Lundstrom Minority Carriers in III-V Semiconductors Physics and Applications vol. 39 1993 Academic Press
15. D. Klaassen A unified mobility model for device simulation I. Model equations and concentration dependence Solid-State Electronics 35 1992 953 959 (Pubitemid 23567459)
16. D. Klaassen A unified mobility model for device simulation II. Temperature dependence of carrier mobility and lifetime Solid-State Electronics 35 1992 961 967 (Pubitemid 23567458)
17. M. Sotoodeh, A. Khalid, and A. Rezazadeh Empirical low-field mobility model for III-V compounds applicable in device simulation codes Journal of Applied Physics 87 2000 2890
18. p+-n GaAs diodes Applied Physics Letters 52 1988 2255 2257
19. D. Caughey, and R. Thomas Carrier mobilities in silicon empirically related to doping and field Proceedings of the IEEE 55 1967 2192 2193
20. P. DeMoulin, The physics and modeling of gallium arsenide solar cells (1988). ProQuest Dissertations and Theses, 194 p. Retrieved from http://search.proquest.com/docview/303592299?accountid=14712.
21. J.G. Simmons, and G.W. Taylor Nonequilibrium steady-state statistics and associated effects for insulators and semiconductors containing an arbitrary distribution of traps Physical Review B 4 1971 502 511
22. P. Ciampolini, A. Pierantoni, M. Melanotte, C. Cecchetti, C. Lombardi, G. Baccarani, Realistic device simulation in three dimensions [EPROM cell], in: International Electron Devices Meeting, 1989. IEDM '89. Technical Digest, pp. 131-134.
23. K. Tomizawa Numerical Simulation of Submicron Semiconductor Devices 1993 Artech House Boston
24. N. Goto, Y. Ohno, and H. Yano Two-dimensional numerical simulation of side-gating effect in GaAs MESFETs IEEE Transactions on Electron Devices 37 1990 1821 1827
25. P. Dodd, Studies of Heterojunction Bipolar Transistor Device Physics and New Device Concepts, Ph.D. Thesis, 1993.
26. Deckbuild user's manual Device Simulation Software 2012 Silvaco International
27. W. Mönch Semiconductor Surfaces and Interfaces vol. 26 2001 Springer
28. C. Algora Very-high-concentration challenges of III-V multijunction solar cells Concentrator Photovoltaics 130 2007 89 111 (Springer Series in Optical Sciences Volume 130)
29. T. Stellwag, M. Melloch, M. Lundstrom, M. Carpenter, and R. Pierret Orientation-dependent perimeter recombination in GaAs diodes Applied Physics Letters 56 1990 1658 1660
30. V. Díaz, C. Algora, Effects of the size and shape of GaAs solar cells on recombination losses, in: Actas 3ra. Conferencia Dispositivos Electrónicos (2001) 289-292