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Nanoscale

Volumn 7, Issue 22, 2015, Pages 9975-9979

Peculiar pressure effect on Poisson ratio of graphone as a strain damper

(6) Peng, Qing a,b Dearden, Albert K c Chen, Xiao Jia d Huang, Chen c Wen, Xiaodong e,f De, Suvranu a

a RENSSELAER POLYTECHNIC INSTITUTE (United States)

b WUHAN UNIVERSITY (China)

c FLORIDA STATE UNIVERSITY (United States)

d CENTER FOR HIGH PRESSURE SCIENCE AND TECHNOLOGY ADVANCED RESEARCH (China)

e INSTITUTE OF COAL CHEMISTRY (China)

f SYNFUELS CHINA CO (China)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; FIELD EFFECT TRANSISTORS; GRAPHENE TRANSISTORS; HYDROGENATION; NANOELECTRONICS; POISSON RATIO; PRESSURE EFFECTS; STRAIN;

ELASTIC LIMIT; ELECTRONIC AND MAGNETIC PROPERTIES; FIRST-PRINCIPLES CALCULATION; INCREASE IN PRESSURE; NANO DEVICE; STRAIN ENGINEERING; TWO-DIMENSIONAL MATERIALS;

GRAPHENE;

EID: 84930329795 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c4nr07665f Document Type: Article

Times cited : (17)

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