SCOPUS 정보 검색 플랫폼

Volumn 582, Issue , 2015, Pages 224-228

Physical and electrical characterization of high-performance Cu2ZnSnSe4based thin film solar cells

(9) Oueslati, S a,d,f,h Brammertz, G b,c Buffiere M d,e Elanzeery, H a,d,g Touayar, O h Koble C i Bekaert, J j Meuris, M b,c Poortmans, J c,d,e

a KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY (Saudi Arabia)

b HASSELT UNIVERSITY (Belgium)

c HASSELT UNIVERSITY (Belgium)

d IMEC (Belgium)

e UNIVERSITY OF LEUVEN (Belgium)

f FACULTÉ DES SCIENCES DE TUNIS (Tunisia)

g Nile University (Egypt)

h UNIVERSITY OF CARTHAGE (Tunisia)

i HAHN MEITNER INSTITUT (Germany)

more..

Author keywords

Cu2ZnSnSe4; Deep defects; Solar cell characterization; Thin film

Indexed keywords

DEFECTS; EFFICIENCY; OPEN CIRCUIT VOLTAGE; PHOTOLUMINESCENCE SPECTROSCOPY; TEMPERATURE MEASUREMENT; THIN FILMS;

CU2ZNSNSE4; DEEP DEFECTS; EXTERNAL QUANTUM EFFICIENCY; OPTICAL CHARACTERIZATION; PHYSICAL AND ELECTRICAL CHARACTERIZATIONS; POTENTIAL BARRIERS; POTENTIAL FLUCTUATIONS; SOLAR CELL CHARACTERIZATION;

THIN FILM SOLAR CELLS;

EID: 84926527489 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2014.10.052 Document Type: Conference Paper

Times cited : (59)

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