Effects of deposition termination on Cu2ZnSnSe4device characteristics

Thin Solid Films

Volumn 582, Issue , 2015, Pages 184-187

  Repins, I L ^a   Li, J V ^a   Kanevce, A ^a   Perkins, C L ^a   Steirer, K X ^a   Pankow, J ^a   Teeter, G ^a   Kuciauskas, D ^a   Beall, C ^a   Dehart, C ^a   Carapella, J ^a   Bob, B ^b   Park, J S ^a   Wei, S H ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b Engineering IV   (United States)

Author keywords

Copper zinc tin selenide; Copper zinc tin sulfide; Hole barrier; Kesterite; Solar cell; Surface; Thin films; Voltage

Indexed keywords

COPPER COMPOUNDS; DEPOSITION; ELECTRIC POTENTIAL; IV-VI SEMICONDUCTORS; LAYERED SEMICONDUCTORS; OPEN CIRCUIT VOLTAGE; SENSITIVITY ANALYSIS; SOLAR CELLS; SULFUR COMPOUNDS; SURFACES; THIN FILM SOLAR CELLS; THIN FILMS; TIN COMPOUNDS;

CO-EVAPORATED; COPPER ZINC TIN SELENIDE; COPPER ZINC TIN SULFIDES; DEVICE PERFORMANCE; HOLE BARRIER; KESTERITES; SURFACE RECOMBINATIONS; ZERO TEMPERATURES;

ZINC SULFIDE;

EID: 84926513375     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2014.09.028     Document Type: Conference Paper

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