Verification of phototransistor model for Cu(In,Ga)Se2solar cells

Thin Solid Films

Volumn 582, Issue , 2015, Pages 392-396

  Ott, Thomas ^a   Schönberger, Francillina ^a   Walter, Thomas ^a   Hariskos, Dimitrios ^b   Kiowski, Oliver ^b   Salomon, Oliver ^b   Schäffler, Raymund ^c  

^a ULM UNIVERSITY OF APPLIED SCIENCES   (Germany)

^b ZENTRUM FÜR SONNENENERGIE UND WASSERSTOFF FORSCHUNG BADEN WÜRTTEMBERG ZSW   (Germany)

^c Manz CIGS Technology GmbH   (Germany)

Author keywords

Back contact; Cu(In,Ga)Se2; Phototransistor model; Schottky barrier; Simulation; Thin film solar cells

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; OPEN CIRCUIT VOLTAGE; SCHOTTKY BARRIER DIODES; TEMPERATURE; THIN FILM SOLAR CELLS;

BACK CONTACT; CU(IN , GA)SE2; EXPERIMENTAL VERIFICATION; ILLUMINATION INTENSITY; IV CHARACTERISTICS; LONG TERM STABILITY; SCHOTTKY BARRIERS; SIMULATION;

PHOTOTRANSISTORS;

EID: 84926496384     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2014.09.025     Document Type: Conference Paper

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