High-performance deep ultraviolet photodetectors based on ZnO quantum dot assemblies

Journal of Applied Physics

Volumn 116, Issue 10, 2014, Pages

  Xu, Xiaoyong ^a,b   Xu, Chunxiang ^b   Hu, Jingguo ^a  

^a YANGZHOU UNIVERSITY   (China)

^b SOUTHEAST UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; II-VI SEMICONDUCTORS; NANOCRYSTALS; OXIDE MINERALS; PHOTODETECTORS; PHOTONS; SCHOTTKY BARRIER DIODES; ZINC OXIDE;

BACK TO BACK SCHOTTKY; BUILDING BLOCKES; FABRICATED DEVICE; INTERDIGITAL ELECTRODE; ON/OFF CURRENT RATIO; PHOTORESPONSIVITY; QUANTUM DOT ASSEMBLIES; SELECTIVE RESPONSE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84924565874     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4895340     Document Type: Article

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