Atomic layer deposition effect on the electrical properties of Al2O3-passivated PbS quantum dot field-effect transistors

Applied Physics Letters

Volumn 106, Issue 9, 2015, Pages

  So, Hye Mi ^a   Choi, Hyekyoung ^a,b   Shim, Hyung Cheoul ^a   Lee, Seung Mo ^a,b   Jeong, Sohee ^a,b   Chang, Won Seok ^a,b  

^a Korea Institute of Machine and Materials   (South Korea)

^b University of Science and Technology (UST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ATOMIC LAYER DEPOSITION; CHEMICAL ANALYSIS; DEPOSITION; ELECTRIC FIELD EFFECTS; ELECTRON TRANSPORT PROPERTIES; LEAD; MASS SPECTROMETRY; NANOCRYSTALS; PASSIVATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; TEMPERATURE; X RAY PHOTOELECTRON SPECTROSCOPY;

AL-METAL; AMBIPOLAR BEHAVIOR; CHEMICAL REDUCTION; ELECTRON CHANNEL; ELECTRON TRANSPORT; FILL UP; LOW TEMPERATURES; PORE SPACE;

FIELD EFFECT TRANSISTORS;

EID: 84924425571     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4914304     Document Type: Article

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