Phosphorus and boron doping effects on solid phase recrystallization of polycrystalline silicon films amorphized by germanium ion implantation

Journal of Materials Science Letters

Volumn 15, Issue 4, 1996, Pages 343-344

  Kang, M Y ^a   Yamamoto, T ^a   Matsui, T ^a   Kuwano, H ^a  

^a KEIO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; BORON; CRYSTALLIZATION; DOPING (ADDITIVES); GERMANIUM; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; ION IMPLANTATION; NUCLEATION; PHOSPHORUS; SILICA;

ATOMIC SIZE; SILICON VACANCY CONCENTRATION; THERMAL OXIDATION;

POLYCRYSTALLINE MATERIALS;

EID: 0030087414     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF00591657     Document Type: Article

References (7)

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