Cadmium vacancy minority defects as luminescence centers in size and strain dependent photoluminescence shifts in CdS nanotubes

Journal of Physical Chemistry C

Volumn 118, Issue 37, 2014, Pages 21604-21613

  Varghese, Arthur ^a   Ghosh, Prasenjit ^a,b   Datta, Shouvik ^a  

^a Department of Physics ^*  (India)

^b INDIAN INSTITUTE OF SCIENCE EDUCATION AND RESEARCH   (India)

Author keywords

[No Author keywords available]

Indexed keywords

II-VI SEMICONDUCTORS; NANOTUBES; PHOTOLUMINESCENCE; RED SHIFT; SULFUR COMPOUNDS;

DEFECT CONCENTRATIONS; FORMATION ENERGIES; LUMINESCENCE CENTERS; PHOTOLUMINESCENCE PROPERTIES; PHOTOLUMINESCENCE SPECTRUM; PHOTOLUMINESENCE; STRAIN-DEPENDENT; SULFIDE NANOTUBES;

CADMIUM SULFIDE;

EID: 84919731861     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp503954y     Document Type: Article

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