Enhancing the SERS performance of semiconductor nanostructures through a facile surface engineering strategy

Applied Surface Science

Volumn 320, Issue , 2014, Pages 591-595

  Jin, Liangliang ^a,b   She, Guangwei ^a   Wang, Xiaotian ^c   Mu, Lixuan ^a   Shi, Wensheng ^a  

^a TECHNICAL INSTITUTE OF PHYSICS AND CHEMISTRY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Defect; Numerous ZnO nanocrystals; Surface area; Surface enhanced Raman scattering (SERS); ZnO nanorod arrays

Indexed keywords

DEFECTS; II-VI SEMICONDUCTORS; MOLECULES; NANOCRYSTALS; NANORODS; RAMAN SCATTERING; SUBSTRATES; SURFACE DEFECTS; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

ADSORPTION CAPACITIES; LARGE SURFACE AREA; SEMICONDUCTOR NANOSTRUCTURES; SURFACE AREA; SURFACE ENGINEERING; SURFACE ENHANCED RAMAN SCATTERING (SERS); ZNO NANOCRYSTAL; ZNO NANOROD ARRAYS;

SURFACE SCATTERING;

EID: 84919395424     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2014.09.120     Document Type: Article

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