In-plane anisotropy of the electronic structure for the charge- and orbital-ordered state in half-doped manganite with layered structure

Physical Review Letters

Volumn 97, Issue 7, 2006, Pages

  Lee, Y S ^a,b   Onoda, S ^a   Arima, T ^a,c   Tokunaga, Y ^a   He, J P ^a   Kaneko, Y ^a   Nagaosa, N ^d,e   Tokura, Y ^a,d,e  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b Soongsil University   (South Korea)

^c TOHOKU UNIVERSITY   (Japan)

^d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^e UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC STRUCTURE; MANGANESE OXIDE; MANGANITES; OPTICAL CONDUCTIVITY; POLARIZATION; QUANTUM INTERFERENCE DEVICES;

CHARGE AND ORBITAL ORDERING; CHARGE- AND ORBITAL-ORDERED STATE; FERROMAGNETIC CHAINS; HALF-DOPED MANGANITES; OPTICAL CONDUCTIVITY SPECTRA; PERPENDICULAR POLARIZATION; QUANTUM INTERFERENCE EFFECTS; THEORETICAL CALCULATIONS;

ANISOTROPY;

EID: 84917671723     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.97.077203     Document Type: Article

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