Improved carrier mobility and bandgap tuning of zinc doped bismuth oxide

RSC Advances

Volumn 5, Issue 4, 2015, Pages 2504-2510

  Jabeen Fatima, M J ^a   Navaneeth, A ^a   Sindhu, S ^a  

^a UNIVERSITY OF CALICUT   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC EMISSION SPECTROSCOPY; BISMUTH; CARRIER CONCENTRATION; ENERGY GAP; HALL MOBILITY; OPTICAL PROPERTIES; SINTERING; SYNTHESIS (CHEMICAL); THERMOANALYSIS; X RAY ANALYSIS; ZINC;

AVERAGE PARTICLE SIZE; CITRATE GEL METHOD; CRYSTALLINITIES; DECOMPOSITION TEMPERATURE; ELECTRONIC AND OPTICAL PROPERTIES; HALL MEASUREMENTS; OPTOELECTRONIC APPLICATIONS; SINTERING TEMPERATURES;

CARRIER MOBILITY;

EID: 84916910206     PISSN: None     EISSN: 20462069     Source Type: Journal    
DOI: 10.1039/c4ra12494d     Document Type: Article

References (29)

1. Y.-C. Wu, Y.-C. Chaing, C.-Y. Huang, S.-F. Wang and H.-Y. Yang, Dyes Pigm., 2013, 98, 25.
2. S. Balachandran and M. Swaminathan, J. Phys. Chem. C, 2012, 116, 26306.
3. M. Muruganandham, R. Amutha, G.-J. Lee, S.-H. Hsieh, J. J. Wu and M. Sillanpaa, J. Phys. Chem. C, 2012, 116, 12906.
4. W. E. Mahmoud and A. A. Al-Ghamdi, Polym. Adv. Technol., 2009, 22, 877.
5. F.-L. Zheng, G.-R. Li, Y.-N. Ou, Z.-L. Wang, C.-Y. Su and Y.-X. Tong, Chem. Commun., 2010, 46, 5021.
6. A. Cabot, A. Marsal, J. Aribol and J. R. Morante, Sens. Actuators, B, 2004, 99, 74.
7. S. S. Bhande, R. S. Mane, A. V. Ghule and S.-H. Han, Scr. Mater. , 2011, 65, 1081.
8. O. Monnereau, L. Tortet, P. Llewellyn, F. Rouquerol and G. Vacquier, Solid State Ionics, 2003, 157 , 163.
9. C. D. Ling, S. Schmid, P. E. R. Blanchard, V. Petříćek, G. J. McIntyre, N. Sharma, A. Maljuk, A. A. Yaremchenko, V. V. Kharton, M. Gutmann and R. L. Withers, J. Am. Chem. Soc., 2013, 135, 6477.
10. C. L. Gomez, O. Depablos-Rivera, J. C. Medina, P. Silva- Bermudez, S. Muhl, A. Zeinert and S. E. Rodil, Solid State Ionics, 2014, 255, 147.
11. G. Zhong, Y. Wang, Z. Dai, J. Wang and Z. Zheng, Phys. Status Solidi B, 2009, 246, 97.
12. H. Weidong, Q. Wei, W. Xiaohong and N. Hailong, Mater. Lett., 2007, 61, 4100.
13. H. Lu, S. Wang, L. Zhao, B. Dong, Z. Xu and J. Li, RSC Adv., 2012, 2, 3374.
14. Y. Qiu, M. Yang, H. Fan, Y. Zuo, Y. Shao, Y. Xu, X. Yang and S. Yang, CrystEngComm, 2011, 13, 1843.
15. P. Shuk, H.-D. Wiemhöfer, U. Göpel and M. Greenblatt, Solid State Ionics, 1996, 89, 179.
16. T.-K. Tseng, J. Choi, D.-W. Jung, M. Davidson and P. H. Holloway, ACS Appl. Mater. Interfaces, 2010, 2, 943.
17. M. Anilkumar, R. Pasricha and V. Ravi, Ceram. Int., 2005, 31, 889.
18. S. Venugopalan and A. K. Ramdas, Phys. Rev. B: Solid State, 1972, 5, 4065.
19. S. N. Narang, N. D. Patel and V. B. Kartha, J. Mol. Struct., 1994, 324, 221.
20. J. W. Lee, N. G. Subramaniam, J. C. Lee, S. Kumar and T. W. Kang, Europhys. Lett., 2011, 95, 47002.
21. R. Amiruddin and M. C. Santhosh Kumar, Ceram. Int., 2014, 40, 11283.
22. H. A. Ahn, Y. Y. Kim, D. C. Kim, S. K. Mohanta and H. K. Cho, J. Appl. Phys., 2009, 105, 013502.
23. B. Lin, Z. Fu and Y. Jia, Appl. Phys. Lett., 2001, 79 , 943.
24. M. Ramani, S. Ponnusamy and C. Muthamizhchelvan, Opt. Mater., 2012, 34, 817.
25. Q. X. Zhao, P. Kalson, M. WillanderH, M. Zhong, W. Lu and J. H. Yang, Appl. Phys. Lett., 2005, 87, 211912.
26. A. A. Dakhel, Bull. Mater. Sci., 2013, 36, 819.
27. E. Hendry, M. Koeberg, J. Pijpers and M. Bonn, Phys. Rev. B: Condens. Matter Mater. Phys., 2007, 75, 233202.
28. M. Prekajski, Z. Dohčević-Mitrović, M. Radović, B. Babić, J. Pantić, A. Kremenović and B. Mantović, J. Eur. Ceram. Soc., 2012, 32, 1983.
29. J.-H. Lee and B.-O. Park, Thin Solid Films, 2003, 426, 94.