메뉴 건너뛰기




Volumn , Issue , 2014, Pages 847-851

Photoelectron spectroscopy, and photovoltaic device study of Cu2ZnSnSe4 and ZnOxS1-x buffer layer interface

Author keywords

buffer; depth profile; kesterite; photoelectron spectroscopy; quaternary; SCAPS modeling; UPS; XPS; zinc oxysulfide

Indexed keywords

BUFFER LAYERS; CADMIUM SULFIDE; CADMIUM SULFIDE SOLAR CELLS; DEPOSITION; DEPTH PROFILING; ENERGY GAP; OPEN CIRCUIT VOLTAGE; OPTICAL WAVEGUIDES; PHOTOELECTRON SPECTROSCOPY; PHOTOELECTRONS; PHOTONS; SOLAR CELLS; THIN FILM DEVICES; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE;

EID: 84912060616     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2014.6925048     Document Type: Conference Paper
Times cited : (2)

References (11)
  • 4
    • 0037680550 scopus 로고    scopus 로고
    • Band offset of high efficiency CBD-zns/CIGS thin film solar cells
    • Nakada, T., Hongo, M., and Hayashi, E., "Band offset of high efficiency CBD-ZnS/CIGS thin film solar cells," Thin Solid Films 431-432, 2003, pp 242-248.
    • (2003) Thin Solid Films , vol.431-432 , pp. 242-248
    • Nakada, T.1    Hongo, M.2    Hayashi, E.3
  • 8
    • 0033903689 scopus 로고    scopus 로고
    • Modelling polycrystalline semiconductor solar cells
    • Burgelman, M., Nollet, P., and Degrave, S., "Modelling polycrystalline semiconductor solar cells," Thin Solid Films 361, 2000, pp 527-532.
    • (2000) Thin Solid Films , vol.361 , pp. 527-532
    • Burgelman, M.1    Nollet, P.2    Degrave, S.3
  • 9
    • 84884249246 scopus 로고    scopus 로고
    • Electrical properties of point defects in CdS and ZnS
    • Varley, J. B. and V. Lordi. "Electrical properties of point defects in CdS and ZnS," Appl. Phys. Lett. 103, 2013, 102103.
    • (2013) Appl. Phys. Lett. , vol.103
    • Varley, J.B.1    Lordi, V.2
  • 10
    • 0001867363 scopus 로고
    • An x-ray photoelectron spectroscopy study of the chemical changes in oxide and hydroxide surfaces induced by ar+ ion bombardment
    • Chuang, T., Brundle, C., and Wandelt, K., "An x-ray photoelectron spectroscopy study of the chemical changes in oxide and hydroxide surfaces induced by Ar+ ion bombardment," Thin Solid Films 53, 1978, pp 19-27.
    • (1978) Thin Solid Films , vol.53 , pp. 19-27
    • Chuang, T.1    Brundle, C.2    Wandelt, K.3
  • 11
    • 33646198048 scopus 로고
    • Precise determination of the valence-band edge in X-ray photoemission spectra: Application to measurement of semiconductor interface potentials
    • Kraut, E. A., and Grant., R. W., Waldrop, J. R., and Eowalczyk, S. P. "Precise determination of the valence-band edge in X-ray photoemission spectra: Application to measurement of semiconductor interface potentials," Phys. Rev. Lett. 44, 1980, pp 1620-1623.
    • (1980) Phys. Rev. Lett. , vol.44 , pp. 1620-1623
    • Kraut, E.A.1    Grant, R.W.2    Waldrop, J.R.3    Eowalczyk, S.P.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.