Enhanced thermoelectric properties of selenium-deficient layered TiSe2-x: A charge-density-wave material

ACS Applied Materials and Interfaces

Volumn 6, Issue 21, 2014, Pages 18619-18625

  Bhatt, Ranu ^a   Bhattacharya, Shovit ^a   Basu, Ranita ^a   Ahmad, Sajid ^a   Chauhan, A K ^a   Okram, G S ^b   Bhatt, Pramod ^a   Roy, Mainak ^a   Navaneethan, M ^c   Hayakawa, Y ^c   Debnath, A K ^a   Singh, Ajay ^a   Aswal, D K ^a   Gupta, S K ^a  

^a BHABHA ATOMIC RESEARCH CENTRE   (India)

^b UGC DAE CONSORTIUM FOR SCIENTIFIC RESEARCH   (India)

^c SHIZUOKA UNIVERSITY   (Japan)

Author keywords

interfaces; lattice thermal conductivity; layer microstructure; nanocrystalline materials; thermoelectric material

Indexed keywords

CHARGE DENSITY; CHARGE DENSITY WAVES; HOT PRESSING; INTERFACES (MATERIALS); MICROSTRUCTURE; NANOCRYSTALLINE MATERIALS; NANOCRYSTALS; SCANNING ELECTRON MICROSCOPY; SELENIUM; SELENIUM COMPOUNDS; TEMPERATURE; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY; TITANIUM COMPOUNDS;

CHARGE-DENSITY WAVE MATERIAL; HOT PRESSING TEMPERATURE; HOT-PRESS TEMPERATURE; LATTICE THERMAL CONDUCTIVITY; LAYER MICROSTRUCTURES; LAYERED MICROSTRUCTURE; THERMO-ELECTRIC MATERIALS; THERMOELECTRIC PROPERTIES;

THERMAL CONDUCTIVITY;

EID: 84910132130     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am503477z     Document Type: Article

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