Silicane as an inert substrate of silicene: A promising candidate for FET

Journal of Physical Chemistry C

Volumn 118, Issue 43, 2014, Pages 25278-25283

  Zhang, Run Wu ^a   Zhang, Chang Wen ^a   Ji, Wei Xiao ^a   Hu, Shu Jun ^b   Yan, Shi Shen ^b   Li, Sheng Shi ^a   Li, Ping ^a   Wang, Pei Ji ^a   Liu, Yu Shen ^c  

^a UNIVERSITY OF JINAN   (China)

^b SHANDONG UNIVERSITY   (China)

^c CHANGSHU INSTITUTE OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DANGLING BONDS; ENERGY GAP; HALL MOBILITY; HOLE MOBILITY; SILANES; SILICENE; SUBSTRATES; VAN DER WAALS FORCES;

BAND DISPERSIONS; DIRAC POINT; EFFECTIVE MASS; ELECTRONS AND HOLES; HIGH CARRIER MOBILITY; NANO-DEVICES; SILICON-BASED; SUBSTRATE MATERIAL;

DENSITY FUNCTIONAL THEORY;

EID: 84908565369     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp508253x     Document Type: Article

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