Mesoscale modeling of photoelectrochemical devices: Light absorption and carrier collection in monolithic, tandem, Si|WO3 microwires

Optics Express

Volumn 22, Issue 21, 2014, Pages A1453-A1461

  Fountaine, Katherine T ^a,b   Atwater, Harry A ^b,c  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b Joint Center for Artificial Photosynthesis   (United States)

^c California Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROCHEMISTRY; ELECTROMAGNETIC SIMULATION; LIGHT ABSORPTION; PHOTOCATHODES; SILICON;

CARRIER COLLECTION; CONTACT MATERIAL; GEOMETRICAL OPTIMIZATION; MESO-SCALE MODELING; MESOSCALE ANALYSIS; PHOTO-ELECTROCHEMICAL DEVICE; PHOTOANODE MATERIALS; TANDEM JUNCTION;

TUNGSTEN COMPOUNDS;

NANOCOMPOSITE; NANOWIRE; OXIDE; SILICON; TUNGSTEN; TUNGSTEN OXIDE;

CHEMICAL MODEL; CHEMISTRY; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT; LIGHT; RADIATION ABSORPTION; RADIATION RESPONSE; RADIATION SCATTERING; SEMICONDUCTOR; ULTRASTRUCTURE;

ABSORPTION, RADIATION; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT; LIGHT; MODELS, CHEMICAL; NANOCOMPOSITES; NANOWIRES; OXIDES; SCATTERING, RADIATION; SEMICONDUCTORS; SILICON; TUNGSTEN;

EID: 84908208279     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.22.0A1453     Document Type: Article

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