Reduction of molybdenum resistivity by a seed layer of Ti-W

Microelectronic Engineering

Volumn 37-38, Issue , 1997, Pages 373-380

  Franssila, S ^a   Kattelus, H ^a   Nykanen E ^b  

^a VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

^b AALTO UNIVERSITY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTIVITY OF SOLIDS; FIELD EMISSION MICROSCOPES; METALLIC FILMS; MOLYBDENUM; NUCLEATION; SCANNING ELECTRON MICROSCOPY; SPUTTER DEPOSITION; THICK FILMS; TITANIUM ALLOYS;

FIELD EMISSION SCANNING ELECTRON MICROSCOPY (FE SEM);

MICROELECTRONIC PROCESSING;

EID: 18744430111     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00135-4     Document Type: Article

References (8)

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5. S. Franssila, Tungsten: sputter deposition and plasma etching, Appl. Surf. Sci. 53 (1991) 358.
6. K. Kawabata, T. Tanaka, H. Kajioka, Preparation of W and Mo thin films by RF-DC coupled magnetron sputtering, Mater. Sci. Eng. A 163 (1993) 163.
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8. x films at 4.2 K, J. Vac. Sci. Technol. B 14 (1996) 3395.