Enhanced open voltage of BiFeO3 polycrystalline film by surface modification of organolead halide perovskite

Applied Physics Letters

Volumn 105, Issue 1, 2014, Pages

  Zhao, Pengjun ^a,b   Bian, Liang ^a   Wang, Lei ^a,c,d   Xu, Jinbao ^a   Chang, Aimin ^a  

^a XINJIANG TECHNICAL INSTITUTE OF PHYSICS AND CHEMISTRY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c Shanghai Shanshan Tech Co Ltd   (China)

^d ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

HALIDE PEROVSKITES; OPEN VOLTAGE; POLYCRYSTALLINE FILM;

EID: 84908109036     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4888912     Document Type: Article

References (23)

1. W. Shockley and H. J. Queisser, J. Appl. Phys. 32, 510 (1961). 10.1063/1.1736034
2. O. E. Semonin, J. M. Luther, S. Choi, H. Y. Chen, J. Gao, A. J. Nozik, and M. C. Beard, Science 334, 1530 (2011). 10.1126/science.1209845
3. X. Gong, M. Tong, F. G. Brunetti, J. Seo, Y. Sun, D. Moses, F. Wudl, and A. J. Heeger, Adv. Mater. 23, 2272 (2011). 10.1002/adma.201003768
4. Z. He, C. Zhong, X. Huang, W. Wong, H. Wu, L. Chen, S. Su, and Y. Cao, Adv. Mater. 23, 4636 (2011). 10.1002/adma.201103006
5. M. Qin, K. Yao, and Y. C. Liang, Appl. Phys. Lett. 93, 122904 (2008). 10.1063/1.2990754
6. V. M. Fridkin, Crystallogr. Rep. 46, 654 (2001). 10.1134/1.1387133
7. W. Ji, K. Yao, and Y. C. Liang, Adv. Mater. 22, 1763 (2010). 10.1002/adma.200902985
8. A. M. Glass, D. Linde, and T. J. Negran, Appl. Phys. Lett. 25, 233 (1974). 10.1063/1.1655453
9. G. Chanussot, V. M. Fridkin, G. Godefroy, and B. Jannot, Appl. Phys. Lett. 31, 3 (1977). 10.1063/1.89471
10. I. E. Castelli, T. Olsen, S. Datta, D. D. Landis, S. Dahl, K. S. Thygesen, and K. W. Jacobsen, Energy Environ. Sci. 5, 5814 (2012). 10.1039/c1ee02717d
11. S. Y. Yang, J. Seidel, S. J. Byrnes, P. Shafer, C.-H. Yang, M. D. Rossell, P. Yu, Y.-H. Chu, J. F. Scott, J. W. Ager III, L. W. Martin, and R. Ramesh, Nat. Nanotechnol. 5, 143 (2010). 10.1038/nnano.2009.451
12. B. Chen, M. Li, Y. Liu, Z. Zuo, F. Zhuge, Q. Zhan, and R. Li, Nanotechnology 22, 195201 (2011). 10.1088/0957-4484/22/19/195201
13. R. K. Katiyar, A. Kumar, G. Morell, J. F. Scott, and R. S. Katiyar, Appl. Phys. Lett. 99, 092906 (2011). 10.1063/1.3628318
14. Y. Zang, D. Xie, X. Wu, Y. Chen, Y. Lin, M. Li, H. Tian, X. Li, Z. Li, H. Zhu, T. Ren, and D. Plant, Appl. Phys. Lett. 99, 132904 (2011). 10.1063/1.3644134
15. Y. Zang, D. Xie, Y. Chen, X. Wu, T. Ren, J. Wei, H. Zhu, and D. Plant, Nanoscale 4, 2926 (2012). 10.1039/c2nr30084b
16. J. Seidel, D. Fu, S. Y. Yang, E. A. Llado, J. Wu, R. Ramesh, and J. W. Ager III, Phys. Rev. Lett. 107, 126805 (2011). 10.1103/PhysRevLett.107.126805
17. C. Wang, K. Jin, Z. Xu, L. Wang, C. Ge, H. Lu, H. Guo, M. He, and G. Yang, Appl. Phys. Lett. 98, 192901 (2011). 10.1063/1.3589814
18. M. T. Greiner, L. Chai, M. G. Helander, W. Tang, and Z. Lu, Adv. Funct. Mater. 22, 4557 (2012). 10.1002/adfm.201200615
19. R. G. Pearson, Inorg. Chem. 27, 734 (1988). 10.1021/ic00277a030
20. W. Yin, T. Shi, and Y. Yan, Appl. Phys. Lett. 104, 063903 (2014). 10.1063/1.4864778
21. Q. Liu, Y. Zhou, J. Kou, X. Chen, Z. Tian, J. Gao, S. Yan, and Z. Zou, J. Am. Chem. Soc. 132, 14385 (2010). 10.1021/ja1068596
22. J. Im, C. Lee, J. Lee, S. Park, and N. Park, Nanoscale 3, 4088 (2011). 10.1039/c1nr10867k
23. J. H. Noh, S. H. Im, J. H. Heo, T. N. Mandal, and S. Il Seok, Nano Lett. 13, 1764 (2013). 10.1021/nl400349b