Detailed analysis of short-channel SOI DT-MOSFET

European Solid-State Device Research Conference

Volumn 13-15 Sept. 1999, Issue , 1999, Pages 380-383

  Ernst, T ^a,c   Munteanu, D ^a   Cristoloveanu, S ^a   Pelloie, J L ^b   Faynot, O ^b   Raynaud, C ^b  

^a Grenoble INP Phelma   (France)

^b CEA LETI   (France)

^c STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BODY TIED; FLOATING BODIES; SHORT CHANNELS; SIMPLE MODELING; THEORETICAL INVESTIGATIONS;

MOSFET DEVICES;

EID: 84907904066     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. S. Cristoloveanu and S. S. Li, Electrical Characterization of Silicon-On-Insulalor Materials and Devices, Kluwer, Boston, 1995.
2. T. Fuse et al., "A O. 5V 200mhz I-stage 32 b ALU using a body biased controlled SOl pass-gate logic ", ISSCC Techn. Digest, 1997, pp. 286.
3. F. Assaderaghi, D. Sinitsky, S. A. Parke, J. Bokor, P. K. Ko, "Dynamic Threshold-Voltage MOSFET (DTMOS) for Ultra-Low voltage VLSI", IEEE TED, Vol. 44, 03/97, pp. 414-. 422.
4. W. Jin, P. C. H. Chan, M. Chan, "On the Power Dissipation in Dynamic Threshold Silicon-on-Insulator CMOS Inverter IEEE TED, Vol. 45, 08/98, pp. I717-1724.