Impact of elevated source/drain on the reverse short channel effect

European Solid-State Device Research Conference

Volumn 13-15 Sept. 1999, Issue , 1999, Pages 572-575

  Schumann, D ^a   Cappellani, A ^a   Hammerl, E ^a   Krieg, R ^a   Pindl, S ^a   Schafer H ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

MOS DEVICES; SEMICONDUCTOR JUNCTIONS; THRESHOLD VOLTAGE;

ELEVATED SOURCE/DRAIN; FLAT CHANNELS; IMPLANTATION DAMAGE; NMOSFETS; RE-OXIDATION; REVERSE SHORT CHANNEL EFFECTS; SIDE WALLS;

FIELD EFFECT TRANSISTORS;

EID: 84907893813     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. M. Orlowski, C. Mazure, and F. Lau, "Submicron short channel effects due to gate reoxidation induced lateral interstitial diffusion," IEDM Tech. Dig. (1987) 632
2. C.-Y. Lu, J. M. Sung, "Reverse short channel effects on threshold voltage in submicron salicide devices," IEEE Electr. Dev. Lett. 10 (1989) 446
3. J. Lutze, S. Venkatesan, "Techniques for reducing the reverse short channel effect in sub-O.5 |im CMOS," IEEE Electr. Dev. Lett. 1995 (16) 373
4. S.W. Crowder, P.M. Rousseau, J.P. Snyder, J.A. Scott, P.B. Griffin, and J.D. Plummer, "The effect of source/drain processing on the reverse short channel effect of deep submicron bulk and SOI NMOSFETs," IEDM Techn. Dig. (1995)427
5. D.K. Sadana, A. Acovic, G. Shahidi, H. Hanafi, AC. Warren, D. Grutzmacher, F. Cardone, J. Sun and B. Davari, "Enhanced short-channel effects in NMOSFETs due to boron redistribution induced by arsenic source and drain implant," IEDM Techn. Dig. (1992) 849
6. H. Jacobs, Av. Schwerin, D. Scharfetter and F. Lau, "MOSFET reverse short channel effect due to silicon interstitial capture in gate oxide," IEDM Techn. Dig. (1993)307
7. C. Mazure and M. Orlowski, "Guidelines for reverse short channel behavior," IEEE Electron Device Lett. 1989 (10) 556
8. S. Chaudhry, C.S. Rafferty, W.J. Nagy, Y.F. Chyan, M.S. Carroll, AS. Chen, and K.H. Lee, "Suppression of Reverse Short Channel Effect by High Energy Implantation", IEDM Techn. Dig. (1997) 679