Dynamics of fast-erasing bits in flash memories

European Solid-State Device Research Conference

Volumn , Issue , 2000, Pages 288-291

  Pellati, P ^a   Chimenton, A ^a   Olivo, P ^a   Modelli, A ^b  

^a UNIVERSITY OF FERRARA   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SOLID STATE DEVICES;

CUMULATIVE DISTRIBUTION;

FLASH MEMORY;

EID: 84907854573     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2000.194771     Document Type: Conference Paper

References (4)

1. S. Maramatsu et al, "The solution of over-erase problem controlling poly-Si grain size-Modified scaling principles for Flash Memories," in IEDM Tech. Dig., pp. 847-850, 1992.
2. C. Dunn et al, "Flash EPROM Disturb mechanisms," in Int. Rel. Phys. Symp., p. 299, 1994.
3. P. Cappelletti and A. Modelli, "Flash Memory Reliability," in Flash Memories (P. Cappelletti, C. Golla, P. Olivo, and E. Zanoni, ed.), pp. 399-442, Kluwer Ac. Press, 1999.
4. P. Pellati and P. Olivo, "Automated Test Equipment for Research on Non-Volatile Memories." To be published.