Dielectric pockets-a new concept of the junctions for deca-nanometric CMOS devices

European Solid-State Device Research Conference

Volumn , Issue , 2000, Pages 536-539

  Jurczak, M ^a,c   Skotnicki, T ^a,b   Monfray, S ^a   Gwoziecki, R ^a,d   Paoli, M ^a   Tormen, B ^b   Ribot, P ^a   Dutartre, D ^b   Galvier, J ^b  

^a France Telecom R and D   (France)

^b STMICROELECTRONICS   (France)

^c WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^d STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

SOLID STATE DEVICES;

CHANNEL DOPINGS; CURRENT DRIVES; NANOMETRIC CMOS; PMOS DEVICES;

CMOS INTEGRATED CIRCUITS;

EID: 84907819370     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2000.194833     Document Type: Conference Paper

References (6)

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4. Kubicek et al., ESSDERC'96,p.523
5. Y.Nakahara et al., VLSI'96,p.174.
6. S.Yamakawa et al. IEEE EDL, vol.20, no.7, p.366, 1999.