Separation of random telegraph signals from 1/f noise in MOSFETs under constant and switched bias conditions

European Solid-State Device Research Conference

Volumn , Issue , 2003, Pages 549-552

  Kolhatkar, J S ^a   Vandamme, L K J ^b   Salm, C ^a   Wallinga, H ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; MOSFETS; RANDOM TELEGRAPH SIGNALS; SWITCHED BIAS;

EID: 84907709492     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2003.1256935     Document Type: Conference Paper

References (9)

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2. J Y. Yuzhelevski, M. Yuzhelevski, and G. Jung, 'Random Telegraph Noise Analysis in Time Domain,' Rev, Scientific instruments, vol. 71, no. 4, April 2000
3. I. Bloom and Y. Nemirovsky, 'I/f Noise Reduction of Metal Oxide Semiconductor Transistors by Cycling from Inversion to Accumulation', Appl. Phys. Lett, vol. 58(15), pp. 1664-1666, April 1991.
4. B. Dierickx and E. Simoetl, 'The Decrease of Random Telegraph Signal Noise in Metal-Oxide-Semicondulor Field-Effect Transistors when Cycled from Inversion to Accumulation', J. Appl. Phys., vol. 7! no. 4, pp. 2028-2029, Feb. 1992.
5. A. P. van der Wei, E. A. M. Klumperink, B. Nauta, 'Switched Biasing affects 1/f Noise and Random Telegraph Signals in Deep-Submicron MOSFETs,' Electron. Lett., vol. 37, Iss. 1, pp. 56-57, Jan. 2001.
6. J. S. Kolhaftar, C. Salm, M. J. Knitel, and H. Wallinga, 'Constant and Switched Bias Low-Frequency Noise in p MOSFETs with Varying Gate-Oxide Thickness,' Proceedings of 32"" ESSDERC, pp. 83-86, Sept. 2002.
7. J. S, Kolhatkar, A. P. van der Wei, E. A. M. Klumperink, B. Nauia, C. Salm, H. Wallinga, 'Measurement and Extraction of RTS Parameters under Switched Biased Conditions in MOSFETs,' to be published in the 17∗ International Conference on Noise and Fluctuation (ICNF), Prague, August, 2003.
8. A. V. Belyakov, L. K. J. Vandamme, M. Y. Perov, and A. V. Yaktmov, 'Surst Noise and 1/f Noise in Light Emitting Structures with Quantum Dots,' to be published in the 17∗ International Conference on Noise and Fluctuation (ICNF), Prague, August, 2003.
9. L. K. J. Vandamme, X. Li, and D. Rigaud, 'I/f noise in MOS devices, mobility or number fluctuations?,' (invited paper), IEEE Trans. Electron Devices, vol. 41, pp. 1936-1945, Nov. 1994.