Constant and switched bias low frequency noise in p-MOSFETs with varying gate oxide thickness

European Solid-State Device Research Conference

Volumn , Issue , 2002, Pages 83-86

  Kolhatkar, J S ^a   Salm, C ^a   Knitel, M J ^b   Wallinga, H ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; GATES (TRANSISTOR); NOISE ABATEMENT; POWER SPECTRAL DENSITY; SPECTRAL DENSITY; THERMAL NOISE;

CONSTANT BIAS; CURRENT NOISE; GATE OXIDE THICKNESS; LOW-FREQUENCY NOISE; MOSFETS; P-MOSFETS; PMOS DEVICES; SWITCHED BIAS;

MOSFET DEVICES;

EID: 27144458239     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2002.194876     Document Type: Conference Paper

References (8)

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