High performance 50 nm T-gate In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistors

European Solid-State Device Research Conference

Volumn , Issue , 2003, Pages 517-519

  Cao, Xin ^a   Thayne, Iain ^a   Thoms, Stephen ^a   Holland, Martin ^a   Stanley, Colin ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84907682370     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2003.1256927     Document Type: Conference Paper

References (5)

1. Y Yamashita, A. Endoh, K Shinohara, M. Higashiwaki, K. Hikosaka, T. Mimra, S. Hiyamizu, T. Matsui, "Ultra-Short 25-nm-Gate Lattice-Matched InAlAsiInGaAs HEMTs within the Range of 400 GHz Cutoff Frequency", IEEE Electron Device Letters, V01. 22, 2001, pp367-369
2. T. Enoki, M. Tomizawa, Y Umeda, and Y Ishii, ''0. 0Sum Gate InAlAsiInGaAs High Electron Mobility Transistor and reduction of Its Short Channel Effects", Jpn. J. Appl. Phys. Vol 33, 1994,pp798-803
3. Y. Chen, T. Lodhi, H. McLelland, D. L. Edgar, D. Macintyre, S. Thoms, C. R. Stanley, I. G. Thayne, "First demonstration of InGaAdInAl As HEMTs using T-gates fabricated by a bilayer of UVIJI and PMMA resists", 8th IEEE lntemational Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000, pp. 202-205
4. Y Chen, D. Macintyre, S. Thoms, "Electron beam lithography process for T-and r-shaped gate fabrication using chemically amplified DUV resists and PMMA", J. Vac. Sci. Technology, B17, 1999, pp. 2507-2511
5. Xin Cao, lain Thayne, "Novel high uniformity highly reproducible non selective wet digital gate recess etch process for InP HEMTs", Microelectronic Engineering, 2003, Accept for publication.