Specific heat of twisted bilayer graphene: Engineering phonons by atomic plane rotations

Applied Physics Letters

Volumn 105, Issue 3, 2014, Pages

  Nika, Denis L ^a,b   Cocemasov, Alexandr I ^a   Balandin, Alexander A ^b  

^a MOLDOVA STATE UNIVERSITY   (Moldova)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CRYSTAL LATTICES; GRAPHENE; MATERIALS PROPERTIES; PHONONS; TEMPERATURE;

ATOMIC INTERACTIONS; BILAYER GRAPHENE; INTERATOMIC POTENTIAL; INTERLAYER INTERACTIONS; LAYERED MATERIAL; LOW TEMPERATURES; PHONON ENGINEERING; TWISTED BILAYERS;

SPECIFIC HEAT;

EID: 84907640313     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4890622     Document Type: Article

References (53)

1. J. M. Ziman, Electrons and Phonons: The Theory of Transport Phenomena in Solids (Oxford University Press, New York, 2001).
2. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, Science 306, 666 (2004). 10.1126/science.1102896
3. Y. Zhang, Y.-W. Tan, H. L. Stormer, and P. Kim, Nature (London) 438, 201 (2005). 10.1038/nature04235
4. A. A. Balandin, S. Ghosh, W. Bao, I. Calizo, D. Teweldebrhan, F. Miao, and C. Lau, Nano Lett. 8, 902 (2008). 10.1021/nl0731872
5. S. Ghosh, I. Calizo, D. Teweldebrhan, E. P. Pokatilov, D. L. Nika, A. A. Balandin, W. Bao, F. Miao, and C. N. Lau, Appl. Phys. Lett. 92, 151911 (2008). 10.1063/1.2907977
6. S. Ghosh, W. Bao, D. L. Nika, S. Subrina, E. P. Pokatilov, C. N. Lau, and A. A. Balandin, Nat. Mater. 9, 555 (2010). 10.1038/nmat2753
7. S. Gilje, S. Han, M. Wang, K. L. Wang, and R. B. Kaner, Nano Lett. 7, 3394 (2007). 10.1021/nl0717715
8. Q. Shao, G. Liu, D. Teweldebrhan, and A. A. Balandin, Appl. Phys. Lett. 92, 202108 (2008). 10.1063/1.2927371
9. R. Murali, K. Brenner, Y. X. Yang, T. Beck, and J. D. Meindl, IEEE Electron Device Lett. 30, 611 (2009). 10.1109/LED.2009.2020182
10. K. M. F. Shahil and A. A. Balandin, Nano Lett. 12, 861 (2012). 10.1021/nl203906r
11. K. M. F. Shahil and A. A. Balandin, Solid State Commun. 152, 1331 (2012). 10.1016/j.ssc.2012.04.034
12. Z. Yan, G. Liu, J. M. Khan, and A. A. Balandin, Nat. Commun. 3, 827 (2012). 10.1038/ncomms1828
13. A. A. Balandin, Nat. Mater. 10, 569 (2011). 10.1038/nmat3064
14. A. A. Balandin and D. L. Nika, Mater. Today 15, 266 (2012). 10.1016/S1369-7021(12)70117-7
15. A. C. Ferrari, J. C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K. S. Novoselov, S. Roth, and A. K. Geim, Phys. Rev. Lett. 97, 187401 (2006). 10.1103/PhysRevLett.97.187401
16. I. Calizo, A. A. Balandin, W. Bao, F. Miao, and C. N. Lau, Nano Lett. 7, 2645 (2007). 10.1021/nl071033g
17. W. Cai, A. L. Moore, Y. Zhu, X. Li, S. Chen, L. Shi, and R. S. Ruoff, Nano Lett. 10, 1645 (2010). 10.1021/nl9041966
18. J. H. Seol, I. Jo, A. L. Moore, L. Lindsay, Z. H. Aitken, M. T. Pettes, X. Li, Z. Yao, R. Huang, D. Broido, N. Mingo, R. S. Ruoff, and L. Shi, Science 328, 213 (2010). 10.1126/science.1184014
19. D. L. Nika and A. A. Balandin, J. Phys.: Condens. Matter. 24, 233203 (2012). 10.1088/0953-8984/24/23/233203
20. D. L. Nika, E. P. Pokatilov, A. S. Askerov, and A. A. Balandin, Phys. Rev. B 79, 155413 (2009). 10.1103/PhysRevB.79.155413
21. L. Lindsay, D. A. Broido, and N. Mingo, Phys. Rev. B 83, 235428 (2011). 10.1103/PhysRevB.83.235428
22. H. Zhang, G. Lee, and K. Cho, Phys. Rev. B 84, 115460 (2011). 10.1103/PhysRevB.84.115460
23. D. L. Nika, A. S. Askerov, and A. A. Balandin, Nano Lett. 12, 3238 (2012). 10.1021/nl301230g
24. P. Poncharal, A. Ayari, T. Michel, and J.-L. Sauvajol, Phys. Rev. B 78, 113407 (2008). 10.1103/PhysRevB.78.113407
25. J. Hass, F. Varchon, J. E. Millan-Otoya, M. Sprinkle, N. Sharma, W. A. de Heer, C. Berger, P. N. First, L. Magaud, and E. H. Conrad, Phys. Rev. Lett. 100, 125504 (2008). 10.1103/PhysRevLett.100.125504
26. M. B. Lopes dos Santos, N. M. R. Peres, and A. H. Castro Neto, Phys. Rev. Lett. 99, 256802 (2007). 10.1103/PhysRevLett.99.256802
27. S. Shallcross, S. Sharma, and O. P. Pankratov, Phys. Rev. Lett. 101, 056803 (2008). 10.1103/PhysRevLett.101.056803
28. A. K. Gupta, Y. Tang, V. H. Crespi, and P. C. Eklund, Phys. Rev. B 82, 241406 (R) (2010). 10.1103/PhysRevB.82.241406
29. A. Righi, S. D. Costa, H. Chacham, C. Fantini, P. Venezuela, C. Magnuson, L. Colombo, W. S. Basca, R. S. Ruoff, and M. A. Pimenta, Phys. Rev. B 84, 241409 (R) (2011). 10.1103/PhysRevB.84.241409
30. V. Carozo, C. M. Almeida, E. H. M. Ferreira, L. G. Cancado, C. A. Achete, and A. Jorio, Nano Lett. 11, 4527 (2011). 10.1021/nl201370m
31. J.-W. Jiang, B.-S. Wang, and T. Rabczuk, Appl. Phys. Lett. 101, 023113 (2012). 10.1063/1.4735246
32. A. I. Cocemasov, D. L. Nika, and A. A. Balandin, Phys. Rev. B 88, 035428 (2013). 10.1103/PhysRevB.88.035428
33. C.-C. Lu, Y.-C. Lin, Z. Liu, C.-H. Yeh, K. Suenaga, and P.-W. Chiu, ACS Nano 7, 2587 (2013). 10.1021/nn3059828
34. J. Campos-Delgado, L. C. Cancado, C. A. Achete, A. Jorio, and J.-P. Raskin, Nano Res. 6, 269 (2013). 10.1007/s12274-013-0304-z
35. Y. Wang, Z. Su, W. Wu, S. Nie, N. Xie, H. Gong, Y. Guo, J. H. Lee, S. Xing, X. Lu, H. Wang, X. Lu, K. McCarty, S.-s. Pei, F. Robles-Hernandez, V. G. Hadjiev, and J. Bao, Appl. Phys. Lett. 103, 123101 (2013). 10.1063/1.4821434
36. R. He, T.-F. Chung, C. Delaney, C. Keiser, L. A. Jauregui, P. M. Shand, C. C. Chancey, Y. Wang, J. Bao, and Y. P. Chen, Nano Lett. 13, 3594 (2013). 10.1021/nl4013387
37. T. E. Beechem, T. Ohta, B. Diaconescu, and J. T. Robinson, ACS Nano 8, 1655 (2014). 10.1021/nn405999z
38. J. M. B. Lopes dos Santos, N. M. R. Peres, and A. H. Castro Neto, Phys. Rev. B 86, 155449 (2012). 10.1103/PhysRevB.86.155449
39. L. Lindsay and D. Broido, Phys. Rev. B 81, 205441 (2010). 10.1103/PhysRevB.81.205441
40. D. L. Nika, A. I. Cocemasov, D. V. Crismari, and A. A. Balandin, Appl. Phys. Lett. 102, 213109 (2013). 10.1063/1.4807389
41. A. I. Cocemasov and D. L. Nika, J. Nanoelectron. Optoelectron. 7, 370 (2012). 10.1166/jno.2012.1313
42. α 1 = 398.7 N/m; α 2 = 72.9 N/m; α 3 = -26.4 N/m; α 4 = 1.0 N/m; β 1 = 172.8 N/m; β 2 = -46.1 N/m; β 3 = 33.1 N/m; β 4 = 7.9 N/m; γ 1 = 98.9 N/m; γ 2 = -8.2 N/m; γ 3 = 5.8 N/m; and γ 4 = -5.2 N/m.
43. L. Wirtz and A. Rubio, Solid State Commun. 131, 141 (2004). 10.1016/j.ssc.2004.04.042
44. M. Mohr, J. Maultzsch, E. Dobardić, S. Reich, I. Milošević, M. Damnjanović, A. Bosak, M. Krisch, and C. Thomsen, Phys. Rev. B 76, 035439 (2007). 10.1103/PhysRevB.76.035439
45. J. Lennard-Jones, Proc. R. Soc. Lond. A. 106, 463 (1924). 10.1098/rspa.1924.0082
46. J. F. Green, T. K. Bolland, and J. W. Bolland, J. Chem. Phys. 61, 1637 (1974). 10.1063/1.1682156
47. R. Nicklow, N. Wakabayashi, and H. G. Smith, Phys. Rev. B 5, 4951 (1972). 10.1103/PhysRevB.5.4951
48. A. I. Ansel'm, Introduction to Semiconductor Theory (Mir Publishers, Moscow, 1981).
49. T. Nihira and T. Iwata, Phys. Rev. B 68, 134305 (2003). 10.1103/PhysRevB.68.134305
50. V. N. Popov, Phys. Rev. B 66, 153408 (2002). 10.1103/PhysRevB.66.153408
51. A. Alofi and G. P. Srivastava, J. Appl. Phys. 112, 013517 (2012). 10.1063/1.4733690
52. M. G. Xia and S. L. Zhang, Eur. Phys. J. B 84, 385 (2011). 10.1140/epjb/e2011-20728-2
53. F. Ma, H. B. Zheng, Y. J. Sun, D. Yang, K. W. Xu, and P. K. Chu, Appl. Phys. Lett. 101, 111904 (2012). 10.1063/1.4752010